Formation of Al-Cr-N films by an activated reactive evaporation (ARE) method

High Temperature Materials and Processes

Volumn 19, Issue 3, 2000, Pages 265-274

  Ide, Y ^a   Inada, K ^a   Nakamura, T ^b  

^a Yamaguchi Prefectural University   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; EVAPORATION; MASS SPECTROMETRY; MICROANALYSIS; NITRIDES; THERMOOXIDATION;

ACTIVATED REACTIVE EVAPORATION (ARE); ALUMINUM CHROMIUM NITRIDE;

PROTECTIVE COATINGS;

EID: 0033890559     PISSN: 03346455     EISSN: None     Source Type: Journal    
DOI: 10.1515/HTMP.2000.19.3-4.265     Document Type: Article

References (16)

1. W.-D. Munz, J. Vac. Sci. Technol., A4(6), 2717 (1986).
2. T. Ikeda and H. Satoh, Thin Solid Films, 195, 99 (1991).
3. T. Leyendecker, O. Lemmer and S. Esser, Surface and Coatings Technol., 48, 175 (1991).
4. J.M. Molarius et al., Surface and Coatings Technol., 33, 117 (1987).
5. M.G. Fleming and M.S.J. Hashmi, J. Materials Processing Technol., 32, 481 (1992).
6. H.A. Jehn et al., Surface and Coatings Technol., 50, 45 (1991).
7. Y. Chiba, T. Omura and H. Ichimura, J. Mater. Res., 8, 1109 (1993).
8. Y. Ide and T. Nakamura, J. Japan Inst. Metals, 57, 926 (1993).
9. Y. Ide, Y. Kawasaki and T. Nakamura, Metallurgical Proc. for Early Twenty-First Century, H.Y. Sohn (Ed.), TMS, 1994; 121.
10. R.F. Bunshah and A.C. Raghuram, J. Vac. Sci. Technol., 9, 1385 (1972).
11. A.C. Raghuram and R.F. Bunshah, J. Vac. Sci. Technol., 9, 1389 (1972).
12. Y. Ide et al., J. Japan Inst. Metals, 62, 98 (1998).
13. M. Ishihara et al., Thin Solid Films, 316, 152 (1998).
14. W. Dong-Dong and T. Oki, J. Surface Finishing Sci. Japan, 40, 96 (1989).
15. A. Kawana and H. Ichimura, J. Mining and Mater. Processing Inst. Japan, 108, 868 (1992).
16. Y. Chiba, T. Omura and H. Ichimura, J. Mater. Res., 8, 1109 (1993).