Enhanced corrugated QWIP performance using dielectric coverage

IEEE Transactions on Electron Devices

Volumn 47, Issue 3, 2000, Pages 653-655

  Das, N C ^a   Choi, K K ^b  

^a RAYTHEON COMPANY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SILICA;

QUANTUM WELL INFRARED PHOTODETECTORS (QWIP);

INFRARED DETECTORS;

EID: 0033889078     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824745     Document Type: Article

References (8)

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3. L. Lundqvist et al., "Efficiency of grating coupled AlGaAs/GaAs quantum well infrared detectors," Appl. Phys. Lett., vol. 63, p. 3361, 1993.
4. C. J. Chen, K. K. Choi, M. Z. Tidrow, and D. C. Tsui, "Corrugated quantum well infrared photodetectors for normal incident light coupling," Appl. Phys. Lett., vol. 68, p. 1446, 1996.
5. C. J. Chen, K. K. Choi, W. H. Chang, and D. C. Tsui, "Corrugated quantum well infrared photodetectors with polyimide planarization for detector array application," IEEE Trans. Electron Devices, vol. 45, p. 1431, 1998.
6. K. K. Choi, A. C. Goldberg, N. C. Das, and M. D. Jhabvala, "Corrugated QWIP array fabrication and characterization," in Proc. SPIE Conf. Photodetectors: Materials and Devices, vol. 3287, San Jose, CA, 1998, p. 118.
7. J. Asmussen, "Electron cyclotron resonance microwave discharge for etching and thin film deposition," J. Vac. Sei. Technol. A, vol. 7, p. 883, 1989.
8. M. Maeda and Y. Arita, "Electrical properties and their thermal stability for silicon nitride films prepared by plasma enhanced deposition," J. Appl. Phys., vol. 53, p. 6852, 1982.