Long-wavelength 640 × 486 GaAs/AlGaAs quantum well infrared photodetector snap-shot camera

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 1890-1895

  Gunapala, Sarath D ^a,b   Bandara, Sumith V ^a   Liu, John K ^a   Hong, Winn ^a   Sundaram, Mani ^a   Maker, Paul D ^a   Muller, Richard E ^a   Shott, Craig A ^a   Carralejo, Ronald ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Advanced Processes Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; MULTIPLEXING EQUIPMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE; TEMPERATURE;

BIAS VOLTAGE; DARK CURRENT; FOCAL PLANE ARRAY SENSITIVITY; NOISE EQUIVALENT DIFFERENTIAL TEMPERATURE; QUANTUM WELL INFRARED PHOTODETECTOR CAMERA;

INFRARED DETECTORS;

EID: 0032164235     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711352     Document Type: Article

References (9)

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