Clustering of ultra-low-energy implanted boron in silicon during activation annealing

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 219-223

  Schroer, E ^a   Privitera, V ^a   Priolo, F ^b   Napolitani, E ^c   Camera, A ^c   Moffatt, S ^d  

^a CNR IMETEM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BORON; ELECTRIC RESISTANCE; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

ACTIVATION ANNEALING; ELECTRICAL ACTIVATION;

SEMICONDUCTING SILICON;

EID: 0033888539     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00378-5     Document Type: Article

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