Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 145-148

  Borghesi, A ^a   Sassella, A ^a   Geranzani, P ^b   Porrini, M ^b   Pivac, B ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b MEMC Electronic Materials SpA   (Italy)

^c RUDER BO KOVI INSTITUTE   (Croatia)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXYGEN; PRECIPITATION (CHEMICAL); TEMPERATURE;

INTERSTITIAL OXYGEN; LIQUID HELIUM TEMPERATURE;

SILICON WAFERS;

EID: 0033886668     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00459-6     Document Type: Article

References (9)

1. Borghesi A., Pivac B., Sassella A., Stella A. J. Appl. Phys. 77:1995;4169.
2. Shimura F. Oxygen in Silicon. 1994;Academic Press, San Diego.
3. Sassella A., Borghesi A., Abe T. J. Electrochem. Soc. 145:1998;1715.
4. A. Sassella, A. Borghesi, P. Geranzani, G. Borionetti, Appl. Phys. Lett. 75 (1999) 1131.
5. De Gryse O., Clauws P., Vanhellemont J., Clacys C. Mater. Sci. Forum. 258-263:1997;405.
6. Baghdadi A., Bullis W.M., Croarkin M.C., Li Y.-Z., Scace R.I., Series R.W., Stallhofer P., Watanabe M. J. Electrochem. Soc. 136:1989;2015.
7. A. Sassella, A. Borghesi, G. Borionetti, P. Geranzani, Mater. Sci. Eng. B73 (2000) 224-229.
8. Hu S.M. J. Appl. Phys. 51:1980;5945.
9. Borghesi A., Sassella A., Pivac B. Appl. Phys. Lett. 60:1992;871.