2-D-3-D crossover in single asymmetric quantum wells: investigation of the electric field and temperature effects

IEEE Journal of Quantum Electronics

Volumn 36, Issue 3, 2000, Pages 348-353

  Qu, Fanyao ^a   Morais, Paulo C ^b  

^a FEDERAL UNIVERSITY OF UBERLÂNDIA   (Brazil)

^b UNIVERSITY OF BRASILIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTROOPTICAL MATERIALS; FERMI LEVEL; FINITE DIFFERENCE METHOD; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; TWO DIMENSIONAL;

ELECTRIC FIELD EFFECT CALCULATION; MANY BODY EFFECT CALCULATION; MODULATION DOPED QUANTUM WELLS; POISSON EQUATIONS; SCHRODINGER EQUATIONS; SINGLE ASYMMETRIC QUANTUM WELLS; TWO DIMENSIONAL THREE DIMENSIONAL CROSSOVER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033885662     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.825882     Document Type: Article

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