Oxygen diffusion in single-crystal In2O3 and Tin-doped In2O3

Journal of the Electrochemical Society

Volumn 145, Issue 8, 1998, Pages 2910-2913

  Ikuma, Yasuro ^a   Kamiya, Michiyo ^a   Okumura, Naoya ^a   Sakaguchi, Isao ^b   Haneda, Hajime ^b   Sawada, Yutaka ^c  

^a KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c TOKYO POLYTECHNIC UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; DIFFUSION IN SOLIDS; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; TIN;

FICK'S LAW; INDIUM OXIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032138788     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838735     Document Type: Article

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