SCOPUS 정보 검색 플랫폼

Volumn 117-118, Issue , 1997, Pages 225-229

Infrared analysis of SiO 2 films grown on the 6H-SiC surfaces

(3) Tsuchida, Hidekazu a Kamata, Isaho a Izumi, Kunikazu a

a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY (Japan)

Author keywords

Attenuated total reflection; Fourier transformed infrared spectroscopy; Si O Si stretching vibration; Silicon carbide; Silicon dioxide film

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; SILICON CARBIDE; SURFACES;

ATTENUATED TOTAL REFLECTION (ATR) SPECTROSCOPY; LONGITUDINAL OPTICAL (LO) MODE; STRETCHING VIBRATION; TRANSVERSE OPTICAL (TO) MODE;

SEMICONDUCTING FILMS;

EID: 0031548275 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)80084-0 Document Type: Article

Times cited : (16)

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