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Physica Status Solidi (A) Applied Research

Volumn 154, Issue 2, 1996, Pages 531-541

The determination of arsenic atom concentration in arsenic-doped silicon by using HOLZ analysis

(5) Hashikawa, N a Watanabe, K b Kikuchi, Y c Oshima, Y c,d Hashimoto, I a

a TOKYO UNIVERSITY OF SCIENCE (Japan)

b TOKYO METROPOLITAN COLLEGE OF INDUSTRIAL TECHNOLOGY (Japan)

c FUJITSU LABORATORIES LTD (Japan)

d TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELECTRON DIFFRACTION;

CONVERGENT BEAM ELECTRON DIFFRACTION; DEBYE WALLER FACTORS; HIGHER ORDER LAUE ZONE (HOLZ) DISK PATTERNS;

SILICON;

EID: 0030120686 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.2211540205 Document Type: Article

Times cited : (2)

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