Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces

Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 140-145

  Motohisa, Junichi ^a   Tazaki, Chiharu ^a   Irisawa, Tomoki ^a   Akabori, Masashi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; CRYSTAL ORIENTATION; ELECTRON TRANSPORT PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

VICINAL SURFACES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033882347     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0109-1     Document Type: Article

References (15)

1. A.F.J. Levi, S.L. McCall, and P.M. Platzman, Appl. Phys. Lett. 54, 940 (1989).
2. N. Kikegawa and K. Furuya, Workbook of the 3rd Int. Symp. on New Phenomena in Mesoscopic Structures (Tokyo, Japan: Jpn. Soc. for Promotion of Science, 1995), p. 331.
3. R.L. Headrick, L.C. Feldman, and B.E. Weir, Delta-doping of Semiconductors, ed. E.F. Schubert (Cambridge, U.K.: Cambridge University Press, 1996), p. 461.
4. G.E.W. Bauer and A. A van Gorkum, Science and Engineering of One-and Zero-Dimensional Semiconductors, ed. S. Beaumont and C. Sotomayer-Torres (New York: Plenum, 1990), p. 133.
5. M. Ramsteiner, J. Wagner, D. Behr, G. Junk, L. Däweritz, and R. Hey, Appl. Phys. Lett. 64, 490 (1994).
6. T. Irisawa, J. Motohisa, M. Akabori, and T. Fukui, Jpn. J. Appl. Phys. 37, 1514 (1998).
7. M. Suhara, K. Sato, H. Honji, H. Nakamura, Y. Miyamoto, and K. Furuya, Extended Abstracts of the 1997 Int. Conf. on Solid State Devices and Materials (Tokyo, Japan: the Jpn. Soc. of Appl. Phys., 1997), p. 242.
8. T. Fukui and H. Saito, Jpn. J. Appl. Phys. 29, L483 (1990).
9. E. Veuhoff, T.F. Kuech, and B.S. Meyerson, J. Electrochem. Soc. 132, 1958 (1985).
10. R. Bhat, C. Caneau, C.E. Zah, M.A. Koza, W.A. Bonner, D.M. Hwang, S.A. Schwarz, S.G. Menocal, and F.G. Favire, J. Cryst. Growth 107, 772 (1991).
11. M. Kondo, C. Anayama, N. Okada, H. Sekiguchi, K. Domen, and T. Tanahashi, J. Appl. Phys. 76, 914 (1994).
12. A.G. Thompson, J. Cryst. Growth 124, 457 (1992).
13. N. Kobayashi, T. Makimoto, and Y. Horikoshi, Jpn. J. Appl. Phys. 25, L746 (1986).
14. H. Saito, K. Uwai, and N. Kobayashi, Jpn. J. Appl. Phys. 32, 4440 (1993).
15. J. Ishizaki, K. Ohkuri, and T. Fukui, Jpn. J. Appl. Phys. 35, 1280 (1996).