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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1514-1517

Delta-doping and the possibility of wire-like incorporation of Si on GaAs vicinal surfaces in metalorganic vapor phase epitaxial growth

(4) Irisawa, Tomoki a Motohisa, Junichi a Akabori, Masashi a Fukui, Takashi a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

Doping quantum wires (DQWRs); GaAs vicinal substrates; Metal organic vapor phase epitaxy (MOVPE); Multiatomic steps; Step edges; doping

Indexed keywords

EID: 0342417315 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.1514 Document Type: Article

Times cited : (4)

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