Impact of ultrashallow junction on hot carrier degradation of sub-0.25-μm nMOSFET’s

IEEE Electron Device Letters

Volumn 21, Issue 1, 2000, Pages 27-29

  Nakamura, Kaori ^a   Murakami, Eiichi ^a   Kimura, Shin’ichiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRODES; GATES (TRANSISTOR); HOT CARRIERS; ION IMPLANTATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

HOT CARRIER (HC) DEGRADATION; ULTRASHALLOW JUNCTIONS;

MOSFET DEVICES;

EID: 0033881632     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.817442     Document Type: Article

References (7)

1. A. Nishida, E. Murakami, and S. Kimura, "Characteristics of low-energy BF2- or as-implanted layers and their effect on the electrical performance of 0.15-μm MOSFET’s," IEEE Trans. Electron Devices, vol. 45, pp. 701-709, 1998.
2. H. Hwang, K.-S. Youn, J.-G. Ahn, D. Yang, J.-H. Ha, J.-W. Park, J.-J. Kim, and W.-S. Kim, "Performance and reliability optimization of ultra short channel CMOS device for giga-bit DRAM applications," in IEDM Tech Dig., 1995, pp. 435-438.
3. F.-C. Hsu and H. R. Grinolds, "Structure-enhanced MOSFET degradation due to hot-electron injection," IEEE Electron Device Lett., vol. EDL-5, pp. 71-74, 1984.
4. Y. Sambonsugi and T. Sugii, "Hot-carrier degradation mechanism and promising device design of nMOSFET’s with nitride sidewall spacer." in Proc. Int. Reliab. Phys. Symp., 1998, pp. 184-188.
5. M. Kinugawa, M. Kakumu, S. Yokogawa, and K. Hashimoto, "Submicron MLDD NMOSFET’s for 5 V operation," Symp. VLSI Technol. Dig., pp. 116-117, 1985.
6. R. Izawa, T. Kure, and E. Takeda, "Impact of the gate-drain overlapped devices (GOLD) for deep submicron VLSI," IEEE Trans. Electron Devices, vol. 35, pp. 2088-2093, 1988.
7. J. Scarpulla, T. C. Mele, and J. P. Krusius, "Accurate criterion for MOSFET effective gate length extraction using the capacitance method," in IEDM Tech Dig., 1987, pp. 722-725.