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Volumn 7, Issue 1-3, 2000, Pages 323-326
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An investigation of porous silicon by means of positron annihilation
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Author keywords
Porous silicon; Positron annihilation
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Indexed keywords
ANNEALING;
DESORPTION;
HYDROGEN;
INTERFACES (MATERIALS);
NANOSTRUCTURED MATERIALS;
PHOTOLUMINESCENCE;
POINT DEFECTS;
SEMICONDUCTING FILMS;
SILICA;
SILICON WAFERS;
POSITRON ANNIHILATION SPECTROSCOPY;
VACANCIES;
POROUS SILICON;
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EID: 0033881317
PISSN: 13802224
EISSN: None
Source Type: Journal
DOI: 10.1023/a:1009625307658 Document Type: Article |
Times cited : (2)
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References (5)
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