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Volumn 7, Issue 1, 2000, Pages 81-84

Correlation of photoluminescence and bandgap energies with nanocrystal sizes in porous silicon

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EXCITONS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROSITY; QUANTUM THEORY; SURFACE CHEMISTRY;

EID: 0033879149     PISSN: 13802224     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1009663210016     Document Type: Article
Times cited : (21)

References (20)
  • 3
    • 0004140205 scopus 로고    scopus 로고
    • L.T. Canham (ed.), Electronic Materials Information Service Data reviews Series No. 18 INSPEC, The Institution of Electrical Engineers, London, UK
    • L.T. Canham (ed.), Properties of Porous Silicon, Electronic Materials Information Service Data reviews Series No. 18 (INSPEC, The Institution of Electrical Engineers, London, UK, 1997).
    • (1997) Properties of Porous Silicon
  • 4
    • 0004709257 scopus 로고    scopus 로고
    • edited by D.J. Lockwood, Semiconductors and Semimetals, Academic Press, San Diego
    • P.M. Fauchet, in Light Emission in Silicon: From Physics to Devices, edited by D.J. Lockwood, Semiconductors and Semimetals, Vol. 49 (Academic Press, San Diego, 1998), pp. 206-252.
    • (1998) Light Emission in Silicon: from Physics to Devices , vol.49 , pp. 206-252
    • Fauchet, P.M.1
  • 20
    • 0009244602 scopus 로고
    • One possibility is the non-bridging oxygen hole center. See S.M. Prokes, Appl. Phys. Lett. 62, 3244 (1993).
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 3244
    • Prokes, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.