Comparison of electronic structure and properties of hydrogen-associated and thermal double donors in silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 263-267

  Tokmoldin, S Zh ^a   Mukashev, B N ^a   Abdullin, Kh A ^a   Gorelkinskii, Yu V ^a   Pajot, B ^b  

^a INSTITUTE OF PHYSICS AND TECHNOLOGY   (Kazakhstan)

^b UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; HELIUM; HYDROGEN; INFRARED SPECTROSCOPY; ION IMPLANTATION; LATTICE VIBRATIONS; NITROGEN; SEMICONDUCTOR DOPING;

THERMAL DOUBLE DONORS;

SEMICONDUCTING SILICON;

EID: 0033879039     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00387-6     Document Type: Article

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