DBR lasers emitting at 1060 nm with first-order grating in (InGa)P waveguide layer

Electronics Letters

Volumn 35, Issue 11, 1999, Pages 902-903

  Hofmann, L ^a   Klehr, A ^a   Knauer, A ^a   Smirnitski, V B ^a   Stolz, W ^b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; OPTICAL WAVEGUIDES; PHOTOLITHOGRAPHY; SEMICONDUCTING INDIUM COMPOUNDS;

DISTRIBUTED BRAGG REFLECTOR LASERS; HOLOGRAPHIC LITHOGRAPHY;

SEMICONDUCTOR LASERS;

EID: 0032629398     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990631     Document Type: Article

References (6)

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2. LAMMERT, R.M., UNGAR, J.E., OH, S.W., QI, H., CHEN, J.S., and BAR CHAIM, N.: '980nm high power, high slope efficiency distributed feedback lasers with nonabsorbing mirrors', Electron. Lett., 1998, 34, (17), pp. 1663-1664
3. YANG, H., NESNIDAL, M., AL-MUHANNA, A., MAWST, L.J., BOTEZ, D., VANG, T.A., ALVAREZ, F.D., and JOHNSON, R.: 'High-power single-mode simplified antiresonant reflecting optical waveguide (S-ARROW) distributed feedback semiconductor lasers', IEEE Photonics Technol. Lett., 1998, 10, (8), pp. 1079-1081
4. GAUGGEL, H.-P., GENG, C., SCHWEIZER, H., BARTH, F., HOMMEL, J., WINTERHOFF, R., and SCHOLZ, F.: 'Fabrication and operation of first-order GaInP/A1GaInP DFB lasers at room temperature', Electron. Lett., 1995, 31, (5), pp. 367-368
5. HOFMANN, L., ERBERT, G., KNAUER, A., SMIRNITSKI, V., SEBASTIAN, J., KLEHR, A., WEYERS, M., and STOLZ, W.: 'MOVPE overgrowth of (InGa)P gratings for GaAs-based DBR lasers'. Proc. IPRM '99, Davos, Switzerland, 16-20 May 1999
6. CHU, S.N.G., TANBUN-EK, T., LOGAN, R.A., VANDENBERG, J., SCIORTINO, P.F., WISK, P., and PERNELL, T.L.: 'Grating overgrowth and defect structures in distributed-feedback-buried heterostructure laser diodes', IEEE J. Sel. Topics Quantum Electron., 1997, 3, (3), pp. 862-873