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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 1, 2000, Pages 294-298

Dry etching characteristics of Si-based materials using CF4/O2 atmospheric-pressure glow discharge plasma

(7) Kataoka, Yoshinori a Kanoh, Masaaki a Makino, Nobuaki a Suzuki, Keiji a Saitoh, Shuishi a Miyajima, Hiroo b Mori, Yoshiaki b

a TOSHIBA CORPORATION (Japan)

b SEIKO EPSON CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; GLOW DISCHARGES; PHOTORESISTS; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTRUM ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATMOSPHERIC PRESSURE GLOW DISCHARGE PLASMA; CARBON TETRAFLUORIDE; OPTICAL EMISSION SPECTRAL ANALYSIS;

DRY ETCHING;

EID: 0033877240 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.39.294 Document Type: Article

Times cited : (12)

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