Characterization of boron nitride film synthesized by helicon wave plasma-assisted chemical vapor deposition

Diamond and Related Materials

Volumn 9, Issue 1, 2000, Pages 67-72

  Kim, Kyoung Bo ^a   Kim, Seon Hyo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Boron nitride; Deposition temperature; Helicon wave plasma CVD; Hydrogen incorporation; Microstructure and orientation; Nucleation and growth

Indexed keywords

ANNEALING; COMPRESSIVE STRESS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FILM GROWTH; HYDROGEN; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROTECTIVE COATINGS; RESIDUAL STRESSES; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

HELICON WAVE PLASMAS;

CUBIC BORON NITRIDE;

EID: 0033874103     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00248-4     Document Type: Article

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