Novel method for a smooth interface at poly-SiOx/SiO2 by employing selective etching

IEEE Electron Device Letters

Volumn 21, Issue 4, 2000, Pages 152-154

  Jeon, Jae Hong ^a   Yoo, Juhn Suk ^a   Park, Cheol Min ^a   Choi, Hong Seok ^b   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

^b LG Display Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY MEASUREMENT; ETCHING; EXCIMER LASERS; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICA; SURFACE ROUGHNESS;

AMORPHOUS SILICON FILMS; BUFFERED OXIDE ETCHANT; ELECTRICAL MOBILITY; LASER RECRYSTALLIZATION; TIME RESOLVED OPTICAL REFLECTIVITY;

THIN FILM TRANSISTORS;

EID: 0033873887     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.830965     Document Type: Article

References (8)

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