Effect of the Ga-content on the defect properties of CuIn1-xGaxSe2 single crystals

Thin Solid Films

Volumn 361, Issue , 2000, Pages 411-414

  Schon J H ^a,b   Kloc, Ch ^a   Bucher, E ^a,b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COPPER COMPOUNDS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; ENTHALPY; HALL EFFECT; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STOICHIOMETRY;

INTRINSIC DEFECTS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0033873612     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00755-5     Document Type: Article

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