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Volumn 210, Issue 1, 2000, Pages 36-39

Photoconductivity characterization of silicon wafer mirror-polishing subsurface damage related to gate oxide integrity

Author keywords

[No Author keywords available]

Indexed keywords

CLEANING; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; GATES (TRANSISTOR); OXIDES; PHOTOCONDUCTIVITY; POLISHING; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

EID: 0033873511     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00642-9     Document Type: Article
Times cited : (18)

References (9)
  • 1
    • 0010564578 scopus 로고    scopus 로고
    • H.Z. Massoud, E.H. Poindexter, Helms C.R. Pennington, NJ: The Electrochemical Society, Inc.
    • 2 Interface-3. Vol. 96-1:1996;379 The Electrochemical Society, Inc. Pennington, NJ.
    • (1996) 2 Interface-3 , vol.961 , pp. 379
    • Udo, Y.1    Nagura, M.2    Samata, S.3    Kubota, H.4
  • 6
    • 0029503331 scopus 로고
    • S. Ashok, J. Chevsllier, I. Akasaki, M.M. Johnson, Sopori B.L. Warrendale, PA: Materials Research Society
    • Ogita Y., Nakano M., Masumura H. Ashok S., Chevsllier J., Akasaki I., Johnson M.M., Sopori B.L. Defect and Impurity Engineered Semiconductors and Devices. Vol. 378:1995;591 Materials Research Society, Warrendale, PA.
    • (1995) Defect and Impurity Engineered Semiconductors and Devices , vol.378 , pp. 591
    • Ogita, Y.1    Nakano, M.2    Masumura, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.