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Volumn 210, Issue 1, 2000, Pages 36-39
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Photoconductivity characterization of silicon wafer mirror-polishing subsurface damage related to gate oxide integrity
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Author keywords
[No Author keywords available]
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Indexed keywords
CLEANING;
CRYSTAL DEFECTS;
ELECTRIC BREAKDOWN OF SOLIDS;
EPITAXIAL GROWTH;
GATES (TRANSISTOR);
OXIDES;
PHOTOCONDUCTIVITY;
POLISHING;
SEMICONDUCTOR GROWTH;
SURFACE ROUGHNESS;
GATE OXIDE BREAKDOWN;
GATE OXIDE INTEGRITY (GOI);
SILICON WAFERS;
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EID: 0033873511
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00642-9 Document Type: Article |
Times cited : (18)
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References (9)
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