-
1
-
-
0010564578
-
GOI failure caused by wafer polishing process
-
H. Z. Massoud, E.H. Poindexter, and C. R. Helms; The Electrochemical Society, Inc., Pennington, NJ
-
Y. Udo, M. Nagura, S. Samata, and H. Kubota, "GOI failure caused by wafer polishing process", The Physics and Chemistry of SiO2 and the Si-Si O2 Interface-3, H. Z. Massoud, E.H. Poindexter, and C. R. Helms, 96-1, pp. 379-387, The Electrochemical Society, Inc., Pennington, NJ, 1996
-
(1996)
The Physics and Chemistry of SiO2 and the Si-Si O2 Interface-3
, vol.96
, Issue.1
, pp. 379-387
-
-
Udo, Y.1
Nagura, M.2
Samata, S.3
Kubota, H.4
-
2
-
-
0029503331
-
Noncontact photo-conductivity amplitude technique to characterize polishing-and slicing-induced residual damage in Si wafers
-
S. Ashok, J. Chevsllier, I. Akasaki, M. M. Johnson, and B. L. Sopori; Materials Research Society, Warrendale PA
-
Y. Ogita, M. Nakano, and H. Masumura, "Noncontact photo-conductivity amplitude technique to characterize polishing-and slicing-induced residual damage in Si wafers", Defect and Impurity Engineered Semiconductors and Devices, S. Ashok, J. Chevsllier, I. Akasaki, M. M. Johnson, and B. L. Sopori, 378, pp. 591-596, Materials Research Society, Warrendale PA, 1995
-
(1995)
Defect and Impurity Engineered Semiconductors and Devices
, vol.378
, pp. 591-596
-
-
Ogita, Y.1
Nakano, M.2
Masumura, H.3
-
3
-
-
4243571784
-
Measurements of polishing -induced residual damages in silicon wafers using noncontact photoconductivity amplitude technique
-
M. Suezawa and H. Katayama-Yoshida; Trans Tech Publication, Zurich-Ueticon, Switzerland
-
Y. Ogita, M. Nakano, and H. Masumura, "Measurements of polishing -induced residual damages in silicon wafers using noncontact photoconductivity amplitude technique", Defects in Semiconductor 18, M. Suezawa and H. Katayama-Yoshida 196-201, Part 4, pp. 1813-1816, Trans Tech Publication, Zurich-Ueticon, Switzerland, 1995
-
(1995)
Defects in Semiconductor 18
, vol.196-201
, Issue.PART 4
, pp. 1813-1816
-
-
Ogita, Y.1
Nakano, M.2
Masumura, H.3
-
4
-
-
0030655408
-
2 laser/mm-wave photoconductivity amplitude technique
-
G. S. Higashi, M. Hirose, S. RAghavan, and S. Verhaverbeke; Materials Research Society, Warrendale PA
-
2 laser/mm-wave photoconductivity amplitude technique", Science and Technology of Semiconductor Surface Preparation, G. S. Higashi, M. Hirose, S. RAghavan, and S. Verhaverbeke, 477, pp. 209-214, Materials Research Society, Warrendale PA, 1997
-
(1997)
Science and Technology of Semiconductor Surface Preparation
, vol.477
, pp. 209-214
-
-
Ogita, Y.1
Hosoda, Y.2
Miyazaki, M.3
-
5
-
-
0026678798
-
Non-contact observations of photoconductivity decay and carrier lifetime measurements in epitaxial silicon wafers
-
Y. Ogita, "Non-contact observations of photoconductivity decay and carrier lifetime measurements in epitaxial silicon wafers", Institute of Physics, Semicond. Sci. Technolo, 7, No. 1 pp. A175-179, 1992
-
(1992)
Institute of Physics, Semicond. Sci. Technolo
, vol.7
, Issue.1
-
-
Ogita, Y.1
-
6
-
-
21344496258
-
Noncontact evaluation of subsurface and surface in the UV mm-wave Si wafers by photoconductivity transient technique
-
J. Jimenez; Institute of Physics Publishing, Bristol and Philadelphia
-
Y. Ogita, K. Yakushiji and N. Tate, "Noncontact evaluation of subsurface and surface in the UV mm-wave Si wafers by photoconductivity transient technique", Defect Recognition and Image Processing in Semiconductor and Devices, J. Jimenez, 135, pp. 39-42, Institute of Physics Publishing, Bristol and Philadelphia, 1994
-
(1994)
Defect Recognition and Image Processing in Semiconductor and Devices
, vol.135
, pp. 39-42
-
-
Ogita, Y.1
Yakushiji, K.2
Tate, N.3
-
7
-
-
0001851153
-
Non-contacting and non-destructive measurements of photoconductivity transient using UV mm-wave technique-evaluation of DZ width, epitaxial layer contamination and surface property of Si wafer
-
H. R. Huff, W. Bergholz, and K. Sumino; The Electrochemical Society, Inc., Pennington, NJ
-
Y. Ogita, K. Yakushiji and N. Tate, "Non-contacting and non-destructive measurements of photoconductivity transient using UV mm-wave technique-evaluation of DZ width, epitaxial layer contamination and surface property of Si wafer", Semiconductor Silicon/1994, H. R. Huff, W. Bergholz, and K. Sumino, 94-10, pp. 1083-1092, The Electrochemical Society, Inc., Pennington, NJ, 1994
-
(1994)
Semiconductor Silicon/1994
, vol.94
, Issue.10
, pp. 1083-1092
-
-
Ogita, Y.1
Yakushiji, K.2
Tate, N.3
-
8
-
-
0029254317
-
Mo contamination in p/p+ epitaxial silicon wafers
-
M. Aoki, T. Itakura and N. Sasaki, "Mo contamination in p/p+ epitaxial silicon wafers", Jpn. J. Appl. Phys., 34, Part 1, No. 2B, pp. 712-714, 1995
-
(1995)
Jpn. J. Appl. Phys.
, vol.34
, Issue.PART 1 No. 2B
, pp. 712-714
-
-
Aoki, M.1
Itakura, T.2
Sasaki, N.3
-
9
-
-
0010529386
-
Development of optical shallow defect analyzer (OSDA) for semiconductor wafer
-
29a-ZD-10 The Japan Society of Applied Physics and Related Societies, Tokyo
-
K. Takeda, E. Ishida, and A. Hiraiwa, "Development of Optical Shallow Defect Analyzer (OSDA) for semiconductor wafer", Extended Abstracts, No.1, The 43rd Spring Meeting, 1996 p. 346, 29a-ZD-10 The Japan Society of Applied Physics and Related Societies, Tokyo, 1996
-
(1996)
Extended Abstracts, No.1, The 43rd Spring Meeting, 1996
, pp. 346
-
-
Takeda, K.1
Ishida, E.2
Hiraiwa, A.3
-
10
-
-
0029419397
-
Novel evaluation method of silicon epitaxial layer lifetime by photoluminescence technique
-
Int. Soc. for Opt. Eng. (SPIE); The Society of Photo-Optical Instrumentation Engineers, Bellingham, Washington
-
Y. Hayamizu, R. Hoshi, Y. Kitagawara and T. Takenaka, Int. Soc. for Opt. Eng. (SPIE), "Novel evaluation method of silicon epitaxial layer lifetime by photoluminescence technique", SPIE, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, 2638, pp. 113-120, The Society of Photo-Optical Instrumentation Engineers, Bellingham, Washington, 1995
-
(1995)
SPIE, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II
, vol.2638
, pp. 113-120
-
-
Hayamizu, Y.1
Hoshi, R.2
Kitagawara, Y.3
Takenaka, T.4
-
11
-
-
0000943213
-
Characterization of bulk microdefects and surface defects in Czochralski silicon using infrared interference contrast
-
Abstract No. 274; The Electrochemical Society, Inc., Pennington, NJ
-
P. D. Flesher, M. A. Nokes, P. G. Borden, H. J. Kim and S. Hahn, "Characterization of bulk microdefects and surface defects in Czochralski silicon using infrared interference contrast", Extended Abstracts of the 185th Electrochemical Society Meeting, 94-1, Abstract No. 274, pp. 443, The Electrochemical Society, Inc., Pennington, NJ, 1994
-
(1994)
Extended Abstracts of the 185th Electrochemical Society Meeting
, vol.94
, Issue.1
, pp. 443
-
-
Flesher, P.D.1
Nokes, M.A.2
Borden, P.G.3
Kim, H.J.4
Hahn, S.5
-
12
-
-
0010529835
-
Evaluation of near-surface microdefects in Czochralski-Si-wafers after a CMOS process by an in infrared interference method", SPIE, "Novel evaluation method of silicon epitaxial layer lifetime by photoluminescence technique
-
The Society of Photo-Optical Instrumentation Engineers, Bellingham, Washington
-
Y. Kitagawara, K. Aihara, S. Oka, and T. Takenaka, "Evaluation of near-surface microdefects in Czochralski-Si-wafers after a CMOS process by an in infrared interference method", SPIE, "Novel evaluation method of silicon epitaxial layer lifetime by photoluminescence technique", Optical Characterization Techniques for High-Performance Microelectronic Device manufacturing II, 2638, pp. 113-120, The Society of Photo-Optical Instrumentation Engineers, Bellingham, Washington, 1995
-
(1995)
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II
, vol.2638
, pp. 113-120
-
-
Kitagawara, Y.1
Aihara, K.2
Oka, S.3
Takenaka, T.4
-
13
-
-
0010530235
-
-
at Shin-Etsu Handotai Co. Ltd., Private communication
-
H. Masumura at Shin-Etsu Handotai Co. Ltd., Private communication
-
-
-
Masumura, H.1
-
14
-
-
0010565591
-
-
at Mitsubisi Materials Silicon Corp. Private communication
-
H. Kondo at Mitsubisi Materials Silicon Corp. Private communication
-
-
-
Kondo, H.1
-
15
-
-
0029250675
-
Effect of SC1 process on silicon surface microroughness and oxide breakdown characteristics
-
K. Akiyama, N. Naito, M. Nagamori, H. Koya, E. Morita, K. Sassa and H. Suga, "Effect of SC1 process on silicon surface microroughness and oxide breakdown characteristics", Jpn. J. Appl. Phys., 34, Part 2, No. 2A, pp. L153-155, 1995
-
(1995)
Jpn. J. Appl. Phys.
, vol.34
, Issue.PART 2 No. 2A
-
-
Akiyama, K.1
Naito, N.2
Nagamori, M.3
Koya, H.4
Morita, E.5
Sassa, K.6
Suga, H.7
|