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Volumn 34, Issue 21, 1998, Pages 2034-2035

Hybrid mirror VCSEL with sub-μA threshold current emitting at 850 nm wavelength

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CONTACTS; ELECTRIC CURRENT MEASUREMENT; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS;

EID: 3743113829     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981403     Document Type: Article
Times cited : (2)

References (7)
  • 1
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    • WONG, Y.-M., et al.: 'Technology development of a high-density 32-channel 16-Gb/s optical data link for optical interconnection applications for the optoelectronic technology consortium', J. Lightwave Technol., 1995, LT-13, pp. 995-1016
    • (1995) J. Lightwave Technol. , vol.LT-13 , pp. 995-1016
    • Wong, Y.-M.1
  • 2
    • 0030213607 scopus 로고    scopus 로고
    • Sub40μA continuous-wave lasing in an oxidized vertical-cavity surfaceemitting laser with dielectric mirrors
    • HUFFAKER, D.L., GRAHAM, L.A., DENG, H., and DEPPE, D.G.: 'Sub40μA continuous-wave lasing in an oxidized vertical-cavity surfaceemitting laser with dielectric mirrors', IEEE Photonics Technol Lett., 1996, 8, pp. 974-976
    • (1996) IEEE Photonics Technol Lett. , vol.8 , pp. 974-976
    • Huffaker, D.L.1    Graham, L.A.2    Deng, H.3    Deppe, D.G.4
  • 3
    • 0029304501 scopus 로고
    • Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
    • YANG, G.M., MACDOUGAL, M.H., and DAPKUS, P.D.: 'Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation', Electron. Lett., 1995, 31, pp. 886-888
    • (1995) Electron. Lett. , vol.31 , pp. 886-888
    • Yang, G.M.1    Macdougal, M.H.2    Dapkus, P.D.3
  • 4
    • 0347239298 scopus 로고    scopus 로고
    • Submilliampere operation of selectively oxidised GaAs-QW vertical cavity lasers emitting at 840nm
    • SCHRÖDER, S., GROTHE, H., and HARTH, W.: 'Submilliampere operation of selectively oxidised GaAs-QW vertical cavity lasers emitting at 840nm', Electron. Lett., 1996, 32, pp. 348-349
    • (1996) Electron. Lett. , vol.32 , pp. 348-349
    • Schröder, S.1    Grothe, H.2    Harth, W.3
  • 7
    • 0031076450 scopus 로고    scopus 로고
    • Oxidation of AlGaAs layers for tapered apertures in verticalcavity lasers
    • NAONE, R.L., HEGBLOM, E.R., THIBEAULT, B.J., and COLDREN, L.A.: Oxidation of AlGaAs layers for tapered apertures in verticalcavity lasers', Electron. Lett., 1997, 33, pp. 300-301
    • (1997) Electron. Lett. , vol.33 , pp. 300-301
    • Naone, R.L.1    Hegblom, E.R.2    Thibeault, B.J.3    Coldren, L.A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.