Carrier mobility distribution in annealed undoped LEC InP material

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 179-183

  Zhao, Y W ^c   Fung, S ^c   Beling, C D ^c   Sun, N F ^a   Chen, X D ^a   Sun, T N ^a   Zhang, Ji ^a   Bi, Keyun ^b   Wu, Xiang ^b  

^a HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

^b Chinese Academy of Electronics and Information Technology   (China)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL DEFECTS; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

HALL MEASUREMENT; LIQUID ENCAPSULATED CZOCHRALSKI;

CRYSTAL GROWTH FROM MELT;

EID: 0033872275     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00859-3     Document Type: Article

References (26)

1. Guha S., Hasegawa F. Solid State Electron. 20:1977;27.
2. Tsubaki K., Sugiyama K. Jpn. J. Appl. Phys. 19:1980;1185.
3. Yamazoe Y., Sasai Y., Nishino T., Kamakawa Y. Jpn. J. Appl. Phys. 20:1981;347.
4. Hofmann D., Müller G., Streckfuss N. Appl. Phys. A. 48:1989;315.
5. Hirt G., Hofmann D., Mosel F., Schafer N., Müller G. J. Electron. Mater. 20:1991;1065.
6. Kainosho K., Shimakura H., Yamamoto H., Oda O. Appl. Phys. Lett. 59:1991;932.
7. Fornari R., Brinciotti A., Gombia E., Mosca R., Sentiri A. Mater. Sci. Eng. B 28:1994;95.
8. Hruban A., Strzelecka St., Wegner W., Gladysz M., Orlowski W., Piesa M., Mirowska A. Goldlewski M. Proceedings of the Eighth Conference on Semi-insulating III-V Materials, Warsaw, Poland. 1994;43 World Scientific, Singapore.
9. Wolf T., Bimberg D., Hirt G., Hofmann D., Müller G. Proceedings of the Fourth International Conference on InP and Related Materials. 1992;630 Newport, USA.
10. Hirt G., Mono T., Müller G. Mater. Sci. Eng. B. 28:1994;101.
11. Hirt G., Wolf D., Müller G. J. Appl. Phys. 74:1993;5583.
12. Marrakchi G., Cherkaoui K., Karoui A., Hirt G., Müller G. J. Appl. Phys. 79:1996;6947.
13. Kainosho K., Oda O., Hirt G., Müller G. Mater. Res. Soc. Symp. Proc. 325:1994;101.
14. Fang Z.Q., Look D.C., Uchida M., Kainosho K., Oda O. J. Electron. Mater. 27:1998;L68.
15. Zach F.X., Haller E.E., Gabbe D., Iseler G.W., Bryant G.G., Bliss D.F. J. Electron. Mater. 25:1996;331.
16. Zhao Y.W.et al. Appl. Phys. Lett. 72:1998;2126.
17. Blood P., Orton J.W. J. Phys. C. 7:1974;803.
18. Fung S., Zhao Y.W., Xu X.L., Sun N.F., Sun T.N., Chen X.D., Zhang R.G., Liu S.L., Yang G.Y., Guo X.B., Sun Y.Z., Ran R.Y., Hua Q.H. J. Appl. Phys. 86:1999;951.
19. Petritz R.L. Phys. Rev. 104:1956;1508.
20. Iseler G.W. Gallium arsenide and related compounds. Inst. Phys. Conf. Ser. 45:1978;144.
21. Rhee J.K., Bhattacharya P.K. J. Appl. Phys. 53:1982;4247.
22. Y.W. Zhao, N.F. Sun, S. Fung, X.D. Chen, C.D. Beling, T.N. Sun, Eleventh Am. Crystal Growth Conf., Tucson, AZ, USA, 1-6 August 1999.
23. Fornari R. J. Electron. Mater. 20:1991;1043.
24. Inoue T., Shimakura H., Kainosho K., Hirano R., Oda O. J. Electrochem. Soc. 137:1990;1283.
25. Nishizawa J., Oyama Y., Suto K., Kim K. J. Appl. Phys. 80:1996;1488.
26. P.B. Klein, R.L. Henry, T.A. Kennedy, N.D. Wilsey, in: H.J. Bardeleben (Ed.), Defects in Semiconductors, Mater. Sci. Forum 10-12 (1986) 1259.