Stoichiometry-dependent deep levels in n-type InP prepared by annealing under controlled phosphorus vapor pressure

Journal of Applied Physics

Volumn 80, Issue 3, 1996, Pages 1488-1492

  Nishizawa, Jun Ichi ^a,b   Oyama, Yutaka ^a,b   Suto, Ken ^a,b   Kim, Kiyoon ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010366611     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362986     Document Type: Article

References (14)

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