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Volumn 33, Issue 1, 2000, Pages 67-72

Atomic flux divergence in bamboo line for predicting initial formation of voids and hillocks

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT DISTRIBUTION; TEMPERATURE DISTRIBUTION;

EID: 0033870955     PISSN: 01678442     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-8442(99)00052-X     Document Type: Article
Times cited : (13)

References (7)
  • 1
    • 0032292876 scopus 로고    scopus 로고
    • A new approach to calculate atomic flux divergence by electromigration
    • Sasagawa K., Nakamura N., Saka M., Abé H. A new approach to calculate atomic flux divergence by electromigration. ASME J. Elec. Pack. 120(4):1998;360-366.
    • (1998) ASME J. Elec. Pack , vol.120 , Issue.4 , pp. 360-366
    • Sasagawa, K.1    Nakamura, N.2    Saka, M.3    Abé, H.4
  • 4
    • 49749201891 scopus 로고
    • Current-induced marker motion in gold wires
    • Huntington H.B., Grone A.R. Current-induced marker motion in gold wires. J. Phys. Chem. Solids. 20(1/2):1961;76-87.
    • (1961) J. Phys. Chem. Solids , vol.20 , Issue.1-2 , pp. 76-87
    • Huntington, H.B.1    Grone, A.R.2
  • 5
    • 58149209837 scopus 로고
    • Current density and temperature distributions near the corner of angled metal line
    • Sasagawa K., Saka M., Abé H. Current density and temperature distributions near the corner of angled metal line. Mech. Res. Commun. 22(5):1995;473-483.
    • (1995) Mech. Res. Commun. , vol.22 , Issue.5 , pp. 473-483
    • Sasagawa, K.1    Saka, M.2    Abé, H.3
  • 6
    • 0003354983 scopus 로고
    • Atomistic and computer modeling of metallization failure of integrated circuits by electromigration
    • Kirchheim R., Kaeber U. Atomistic and computer modeling of metallization failure of integrated circuits by electromigration. J. Appl. Phys. 70(1):1991;172-181.
    • (1991) J. Appl. Phys. , vol.70 , Issue.1 , pp. 172-181
    • Kirchheim, R.1    Kaeber, U.2
  • 7
    • 0001531125 scopus 로고
    • Thermal conductivity and interface thermal resistance of Si film on Si substrate determined by photothermal displacement interferometry
    • Kuo B.S.W., Li J.C.M., Schmid A.W. Thermal conductivity and interface thermal resistance of Si film on Si substrate determined by photothermal displacement interferometry. Appl. Phys. A. 55:1992;289-296.
    • (1992) Appl. Phys. A , vol.55 , pp. 289-296
    • Kuo, B.S.W.1    Li, J.C.M.2    Schmid, A.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.