Hydrogen implantation and diffusion in silicon and silicon dioxide

Applied Physics A Materials Science & Processing

Volumn 61, Issue 4, 1995, Pages 381-388

  Fink, D ^a   Krauser, J ^a   Nagengast, D ^a   Murphy, T Almeida ^a   Erxmeier, J ^a   Palmetshofer, L ^b   Braunig D ^a   Weidinger, A ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

61.70.Tm; 66.30.Jt; 79.20.Nc

Indexed keywords

ANNEALING; CODES (SYMBOLS); CRYSTALLINE MATERIALS; DIFFUSION; HYDROGEN; HYDROGEN BONDS; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON;

BALLISTIC COMPUTER CODE; HYDROGEN DISTRIBUTION; HYDROGEN IMPLANTATION; NITROGEN TECHNIQUE; RADIATION-ENHANCE DIFFUSION; TRAPPING/DETRAPPING MECHANISM;

ION IMPLANTATION;

EID: 0029390419     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/BF01540112     Document Type: Article

References (26)

1. Mechanical response of single crystal Si to very high fluence H+ implantation
2. A Monte Carlo computer program for the transport of energetic ions in amorphous targets
3. Nucleation of damage centres during ion implantation of silicon
4. Proton and sodium transport in SiO2films