Novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena

Solid-State Electronics

Volumn 44, Issue 6, 2000, Pages 1049-1053

  Tsai, Jung Hui ^a  

^a CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR); RESONANT TUNNELING BASE TRANSISTORS (RTBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033747229     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00321-4     Document Type: Article

References (17)

1. Miyamoto M., Yano K., Tamaki Y., Aoki M., Nishida T., Scki K., Shimohigashi K. IEEE Trans Electron Dev. ED-40:1993;378.
2. Hafizi M.E., Crowell C.R., Pawlowicz L.M., Kim M.E. IEEE Trans Electron Dev. ED-37:1993;1779.
3. Song J.-.I., Hong W.-.P., Bhat R., Chough K.B., Hayes J.R., Sugeng B., Wei C.J., Hwang J.C.M. Electron Lett. 29:1993;724.
4. Ahmari D.A., Fresina M.T., Hartmann Q.J., Barlage D.W., Marcs P.J., Feng M., Stillman G.E. IEEE Electron Dev Lett. EDL-17:1996;226.
5. Capasso F., Kiehl R.A. J Appl Phys. 58:1985;1366.
6. Seabaugh A.C., Kao Y.C., Frensley W.R., Randall J.N., Reed M.A. Appl Phys Lett. 59:1991;3413.
7. Guo D.F. Solid State Electron. 41:1997;501.
8. Sen S., Capasso F., Cho A.Y., Sivco D.L. IEEE Electron Lett. EDL-9:1988;533.
9. Liu W.C., Lour W.S. Solid State Electron. 34:1991;717.
10. Liu W.C., Guo D.F., Lour W.S. IEEE Trans Electron Dev. ED-39:1992;2740.
11. Liu W.C., Lour W.S. J Appl Phys. 70:1991;485.
12. Chen H.R., Chang C.Y., Lee C.P., Huang C.H., Tsang J.S., Tsai K.L. IEEE Electron Dev Lett. EDL-15:1994;336.
13. Yang Y.F., Hsu C.C., Yang E.S., Chen Y.K. IEEE Trans Electron Dev. ED-42:1995;1210.
14. Swaminathan V., Macrander A.T. Materials aspects of GaAs and InP based structures. 1991;Prentice Hall, Englewood Cliffs, NJ.
15. Miller R.C., Kleinman D.A., Gossard A.C. Phys Rev B. 29:1984;7085.
16. Ren F., Abernathy C.R., Pearton S.J., Wisk P.W., Esagui R. Electron Lett. 28:1993;1150.
17. Nathory RE, Pollack MA, Johnston Jr. WD, Barns RL. Appl Phys Lett 1978;33:659.