SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 41, Issue 3, 1997, Pages 501-506

Characteristics of a triple-well heterostructure-emitter bipolar transistor (TWHEBT)

(1) Guo, Der Feng a

a DEPARTMENT OF ELECTRONIC ENGINEERING (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FUNCTIONS; MATRIX ALGEBRA; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR) PERFORMANCE; TRIPLE WELL RESONANT TUNNELING DIODE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031101570 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(96)00191-8 Document Type: Article

Times cited : (5)

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