Impact of low-temperature anneals of electroplated copper films on copper CMP removal rates

Materials Research Society Symposium - Proceedings

Volumn 566, Issue , 1999, Pages 143-148

  Smekalin, Konstantin ^a   Jiang, Qing Tang ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL POLISHING; ELECTROPLATING; GRAIN GROWTH; HARDNESS; INERT GASES; METALLIC FILMS; RATE CONSTANTS; TEMPERATURE;

ELECTROPLATED DOPPER FILMS; LOW TEMPERATURE ANNEALS; REMOVAL RATE;

COPPER;

EID: 0033745309     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-566-143     Document Type: Article

References (4)

1. Q.T. Jiang, R. Mikkola, Brad Carpenter, and M. E. Thomas, Proceedings of the Advanced Metallization Conference, Colorado Springs, 1998, in print
2. T. Ritzdorf, L. Graham, S. Jin, C. Mu, and D. Fraser, Proceedings of the IITC, 1998, pp.166-168.
3. Frank G. Shi, Bin Zhao and Shi-Qing Wang, Proceedings of the IITC, pp. 73-75.
4. Paul A. Flinn, J. Mater. Res. Vol. 6, No. 7, Jul 1991, pp. 1498-1501.