Characterization of Ga0.52In0.48P/GaAs single quantum well structures grown by solid source molecular beam epitaxy using deep level transient spectroscopy

Journal of Crystal Growth

Volumn 212, Issue 1, 2000, Pages 49-55

  Yoon, S F ^a   Lui, P Y ^a   Zheng, H Q ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

DOPED BARRIER LAYERS; SINGLE QUANTUM WELLS (SQW); SINGLE-TRAP LEVEL STATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033745273     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00020-8     Document Type: Article

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