0.25-μm gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy

Solid-State Electronics

Volumn 43, Issue 4, 1999, Pages 785-789

  Yoon, S F ^a   Gay, B P ^a   Zheng, H Q ^a   Ang, K S ^a   Wang, H ^a   Ng, G I ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

DRAIN CURRENT DENSITY; SOLID SOURCE MOLECULAR BEAM EPITAXY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032663052     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00305-0     Document Type: Article

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