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Volumn 197, Issue 1-2, 1999, Pages 59-66

Characterization of solid source MBE-grown In0.48Ga0.52P/In0.2Ga0.8As/GaAs structures using X-ray reflectivity technique

(3) Yoon, S F a Lui, P Y a Zheng, H Q a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

Molecular beam epitaxy; X ray reflectivity

Indexed keywords

HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE ROUGHNESS;

SOLID-SOURCE MOLECULAR BEAM EPITAXY (SS-MBE); X RAY REFLECTIVITY TECHNIQUE;

SEMICONDUCTOR GROWTH;

EID: 0033079338 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00943-9 Document Type: Article

Times cited : (1)

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