A physics-based short-channel current-voltage model for lightly-doped-drain metal-oxide-semiconductor field-effect-transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3448-3459

  Hu, Man Chun ^a   Jang, Sheng Lyang ^a   Chyau, Chwan Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Fully overlapped LD; Partially overlapped LDD; Poisson equation; Series resistance; Velocity saturation

Indexed keywords

DRAIN CURRENT MODEL; POISSON EQUATION; SERIES RESISTANCE; THRESHOLD VOLTAGE; VELOCITY SATURATION;

CALCULATIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; MOSFET DEVICES;

MATHEMATICAL MODELS;

EID: 0031163153     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3448     Document Type: Article

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