Characteristics of MIS capacitors based on multilayer TiO2-Ta2O5 structures

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 657-658

  Mikhelashvili, V ^a   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; EVAPORATION; LEAKAGE CURRENTS; MULTILAYERS; OXYGEN; SILICA; TANTALUM COMPOUNDS; TITANIUM DIOXIDE;

ELECTRON BEAM EVAPORATION;

MOS CAPACITORS;

EID: 0033741847     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00304-2     Document Type: Article

References (4)

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3. Lu Q, Park D, Kalnitsky A, Chang C, Cheng C, Tay SP, King T, Hu C. IEEE Electron Device Lett 1998;19(9):341.
4. Lee H-J, Sinclair R, Lee M, Lee H-D. J Appl Phys 1998;83(1):139.