Simple and reliable wafer-level electrical probing technique for III-nitride light-emitting epitaxial structures

IEEE Electron Device Letters

Volumn 21, Issue 5, 2000, Pages 212-214

  Zhao, Y S ^a   Jensen, C L ^a   Chuang, R W ^a   Lee, H P ^a   Dong, Z J ^b   Shih, R ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Alpha Photonics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; LEAKAGE CURRENTS; NITRIDES; PROBES; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

ELECTRICAL PROBE; INJECTION CURRENTS; LIGHT EMITTING EPITAXIAL STRUCTURES; SCHOTTKY BARRIER;

LIGHT EMITTING DIODES;

EID: 0033740158     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.841299     Document Type: Article

References (6)

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6. R. W. Chuang et al., "Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor," MRS Internet J. Nitride Semicond., 1999.