Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen system

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 166, Issue , 2000, Pages 75-81

  Volz, K ^a   Rauschenbach, B ^b   Klatt, C ^c   Ensinger, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b UNIVERSITY OF AUGSBURG   (Germany)

^c MAX PLANCK INSTITUT FÜR KERNPHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; AMORPHOUS FILMS; ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; DIELECTRIC FILMS; HYDROGEN; ION IMPLANTATION; NITROGEN; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SILICON NITRIDE;

PLASMA IMMERSION ION IMPLANTATION;

ELECTRIC INSULATING MATERIALS;

EID: 0033728676     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00866-6     Document Type: Article

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