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Volumn 72, Issue 10, 1998, Pages 1164-1166

Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001656055     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121001     Document Type: Article
Times cited : (8)

References (16)
  • 9
    • 0006592275 scopus 로고
    • in edited by P. Mazzoldi and G. W. Arnold Elsevier, Amsterdam
    • I. H. Wilson, in Ion Beam Modification of Insulators, edited by P. Mazzoldi and G. W. Arnold (Elsevier, Amsterdam, 1987), p. 245.
    • (1987) Ion Beam Modification of Insulators , pp. 245
    • Wilson, I.H.1
  • 15
    • 0000197916 scopus 로고
    • in edited by P. Popper Br. Ceram. Res. Assoc., Stoke-on-Trent and 271
    • S. Wild, P. Grieveson, and K. H. Jack, in Special Ceramics 5, edited by P. Popper (Br. Ceram. Res. Assoc., Stoke-on-Trent, 1972), pp. 385 and 271.
    • (1972) Special Ceramics 5 , pp. 385
    • Wild, S.1    Grieveson, P.2    Jack, K.H.3
  • 16
    • 0002493796 scopus 로고
    • in edited by F. L. Riley Martinus Nijhoff, The Hague
    • K. H. Jack, in Progress in Nitrogen Ceramics, edited by F. L. Riley (Martinus Nijhoff, The Hague, 1983), p. 45.
    • (1983) Progress in Nitrogen Ceramics , pp. 45
    • Jack, K.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.