Gas Source Molecular Beam Epitaxy Grown Strained-Si Films on Step-Graded Relaxed Si1-xGex for MOS Applications

Journal of Electronic Materials

Volumn 28, Issue 2, 1999, Pages 98-104

  Bera, L K ^a   Ray, S K ^a   Nayak, D K ^b   Usami, N ^c   Shiraki, Y ^c   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b ALTERA CORPORATION   (United States)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Band offset; Gas source molecular beam epitaxy (GSMBE); Heterostructure MOSFET; Silicon germanium; Strained Si

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; FILM GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING FILMS;

EID: 0033078541     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0225-5     Document Type: Article

References (37)

1. J. Welser, J.L. Hoyt and J.F. Gibbons, IEEE Electron Dev. Lett. 15, 100 (1994).
2. K. Rim, J. Welser, J.L. Hoyt and J.F. Gibbons, IEEE IEDM Tech. Dig. 517 (1995).
3. K. Ismail, IEEE IEDM Tech. Dig. 509 (1995).
4. K. Ismail, S.F. Nelson, J.O. Chu and B.S. Meyerson, Appl. Phys. Lett. 63, 660 (1993).
5. K. Ismail, M. Arafa, K.L. Saenger, J.O. Chu and B.S. Meyerson, Appl. Phys. Lett. 66, 1077 (1995).
6. D. Harame, D. Nguyen-Ngoc, K. Stern, L. Larson, M. Case, S. Kovacic, S. Voinigescu, J. Cressler, T. Tewksburg, R. Gorves, E. Eld, D. Sunderland, D. Rensch, S. Jeng, J. Malinowski, M. Gilbert, K. Schonenberg, D. Ahlgren and B. Meyerson, IEEE IEDM Tech. Dig. 731 (1995).
7. F.K. LeGoues, B.S. Meyerson and J.F. Morar, Phys. Rev. B 66, 2903 (1991).
8. E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.-J. Mii and B.E. Weir, Appl. Phys. Lett. 59, 811 (1991).
9. D.K. Nayak, K. Goto, A. Yutani, J. Murota and Y. Shiraki, IEEE Trans. Electron. Dev. 43, 1709 (1996).
10. G.A. Armstrong and Chinmay K. Maiti, Solid-State Electron. 42, 487 (1998).
11. C.G. van de Walle and R.M. Martin, Phys. Rev. B 34, 5621 (1986).
12. R. People, IEEE J. Quantum Elec. QE-22, 1696 (1986).
13. P. Hohenberg and W. Kohn, Phys. Rev. B 136, 864 (1964).
14. R. People and J.C. Bean, Appl. Phys. Lett. 48, 538 (1986).
15. C.G. van de Walle and R.M. Martin, J. Vac. Sci. Technol. B 3, 1256 (1985).
16. A. Ichii, Y. Tsou and E. Garmire, J. Appl. Phys. 74, 2112 (1993).
17. W. X. Ni and G.V. Hansson, Phys. Rev. B 42, 3030 (1990).
18. K. Schmalz, I.N. Yassievich, H. Rucker and G.H. Grimmeiss, Phys. Rev. B 50, 14287 (1994).
19. L. Vescan, R. Apetz and H. Luth, J. Appl Phys. 73, 271 (1993).
20. J.C. Brighten, I.D. Hawkins, A.R. Peaker, E.H.C. Parker and T.E. Whall, J. Appl. Phys. 74, 1894 (1993).
21. S.P. Voinigescu, K. Iniewski, R. Lisak, C.A.T. Salama, J.P. Noel and D.C. Houghton, Solid-State Electron. 37, 1491 (1994).
22. O. Chretien, R. Apetz, A. Soufi and L. Vescan, Thin Solid Films 294, 198 (1997).
23. J. Welser, J.L. Hoyt and J.F. Gibbons, Jpn. J. Appl. Phys. 33, 2419 (1994).
24. J. Welser, J.L. Hoyt and J.F. Gibbons, Proc. Intl. Conf. SSDM (1993), p. 377.
25. B.S. Meyerson, K.J. Uram and F.K. Legoues, Appl. Phys. Lett. 53, 2555 (1988).
26. S. Fukatsu, H. Yoshida, A. Fujiwara, Y. Takahashi and Y. Shiraki, Appl. Phys. Lett. 61, 804 (1992).
27. Y. Kato, S. Fukatsu and Y. Shiraki, J. Vac. Sci. Technol. B 13, 111 (1995).
28. J. Saarilathi, Users Guide - GISA 3.95: Program for Ion Scattering Analysis, (1992).
29. J. Humlicek, M. Garriga, M.I. Alonso and M. Cardona, J. Appl. Phys. 65, 2827 (1989).
30. J. Koh, Y. Lu, S. Kim, J.S. Burnham, C.R. Wronska and R.W. Collins, App.Phys. Lett. 67, 2669 (1995).
31. J. Humlicek, Properties of Strained and Relaxed Silicon Germanium, ed. E. Kasper, (London: INSPEC, 1995), p. 121.
32. S. John, E.J. Quinones, B. Ferguson, S.K. Ray, C.B. Mullins and S.K. Banerjee, Proc. Mater. Res. Soc., Spring Meeting, Boston, (Pittsburgh, PA: Mater. Res. Soc., 1996).
33. L. Spanos, Q. Liu and A. Irene, J. Vac. Sci. Technol. A 12, 2653 (1994).
34. Chinmay K. Maiti, L.K. Bera, S.S. Dey, D.K. Nayak and N.B. Chakrabarti, Solid-State Electron. 41, 1863 (1997).
35. K. Iniewski, S. Voinigescu, J. Atcha and C.A. T. Salama, Solid-State Electron. 36, 775 (1993).
36. J.J Welser, PhD. thesis, Stanford University, (1994).
37. G. Abstreiter, H. Brugger, T. Wolf, H. Jorke and H.J. Herzog, Phys. Rev. Lett. 54, 2441 (1985).