Modeling of charge to breakdown QBD for thin gate oxide MOS devices

Biennial University/Government/Industry Microelectronics Symposium - Proceedings

Volumn , Issue , 1999, Pages 123-130

  Quddus, Mohammed T ^a   DeMassa, Thomas A ^a   Sanchez, Julian J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

OXIDE DEGRADATION;

MOS DEVICES;

EID: 0032639155     PISSN: 07496877     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (22)