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Volumn , Issue , 2000, Pages 39-42

Monolithic power amplifiers covering 70-113 GHz

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC EQUIPMENT MANUFACTURE; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TELESCOPES;

EID: 0033725392     PISSN: 15292517     EISSN: None     Source Type: Journal    
DOI: 10.1109/RFIC.2000.854412     Document Type: Article
Times cited : (8)

References (10)
  • 4
    • 0029715032 scopus 로고    scopus 로고
    • Highly efficient compact Q-band MMIC power amplifier using 2-mil substrate and partially-matched output
    • CA
    • J. A. Lester Highly efficient compact Q-band MMIC power amplifier using 2-mil substrate and partially-matched output 1996 IEEE MTT-S Int. Microwave Symp. Dig. 1 153 155 1996 IEEE MTT-S Int. Microwave Symp. Dig. San Francisco CA 1996-June
    • (1996) , vol.1 , pp. 153-155
    • Lester, J.A.1
  • 5
    • 0030711807 scopus 로고    scopus 로고
    • 60 GHz high efficiency HEMT MMIC chip set development for high power solid state power amplifier
    • Co
    • Y. Hwang J. Lester G. Schreyer G. Zell S. Schrier D. Yamauchi G. Onak B. Kasody R. Kono Y. C. Chen R. Lai 60 GHz high efficiency HEMT MMIC chip set development for high power solid state power amplifier 1997 IEEE MTT-S Int. Microwave Symp. Dig. 3 1179 1182 1997 IEEE MTT-S Int. Microwave Symp. Dig. Denver Co 1997-June
    • (1997) , vol.3 , pp. 1179-1182
    • Hwang, Y.1    Lester, J.2    Schreyer, G.3    Zell, G.4    Schrier, S.5    Yamauchi, D.6    Onak, G.7    Kasody, B.8    Kono, R.9    Chen, Y.C.10    Lai, R.11
  • 6
    • 85177110930 scopus 로고    scopus 로고
    • A 560 mW, 21% power-added efficiency V-band MMIC power amplifier
    • FL
    • O. S. A. Tang K. H. G. Duh S. M. J. Liu P. M. Smith W. F. Kopp T. J. Rogers D. J. Pritchard A 560 mW, 21% power-added efficiency V-band MMIC power amplifier 18th Annual IEEE GaAs IC Symposium Digest 18th Annual IEEE GaAs IC Symposium Digest Orlando FL 1996-Nov.
    • (1996)
    • Tang, O.S.A.1    Duh, K.H.G.2    Liu, S.M.J.3    Smith, P.M.4    Kopp, W.F.5    Rogers, T.J.6    Pritchard, D.J.7
  • 7
    • 85177140627 scopus 로고
    • A 0.1 μm W-band HEMT production process for high yield and high performance low noise and power MMICs
    • PA
    • M. Biedenbender R. Lai J. Lee S. Chen K. L. Tan P. H. Liu D. C. Streit B. Allen H. Wang A 0.1 μm W-band HEMT production process for high yield and high performance low noise and power MMICs 16th Annual IEEE GaAs IC Symposium Digest 323 327 16th Annual IEEE GaAs IC Symposium Digest Philadelphia PA 1994-Oct.
    • (1994) , pp. 323-327
    • Biedenbender, M.1    Lai, R.2    Lee, J.3    Chen, S.4    Tan, K.L.5    Liu, P.H.6    Streit, D.C.7    Allen, B.8    Wang, H.9
  • 8
    • 0001737390 scopus 로고
    • A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers
    • W. R. Curtice M. Ettenberg A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers IEEE Trans. Microwave Theory Tech. MTT-33 1383 1394 Dec. 1985
    • (1985) IEEE Trans. Microwave Theory Tech. , vol.MTT-33 , pp. 1383-1394
    • Curtice, W.R.1    Ettenberg, M.2
  • 9
    • 85177128887 scopus 로고
    • NY, Liverpool
    • EM user's Manual June 1995 NY, Liverpool Sonnet Software Inc.
    • (1995)
  • 10
    • 0033362739 scopus 로고    scopus 로고
    • Full band waveguide-to-microstrip probe transitions
    • CA
    • Y. C. Leong S. Weinreb Full band waveguide-to-microstrip probe transitions 1999 MTT-S International Microwave Symposium Digest 4 1435 1438 1999 MTT-S International Microwave Symposium Digest Anaheim CA 1999-June
    • (1999) , vol.4 , pp. 1435-1438
    • Leong, Y.C.1    Weinreb, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.