Low-power consumption InGaAs PIN diode switches for V-band applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1208-1210

  Ziegler, Volker ^a   Berg, Michael ^a   Tobler, Hans ^a   Woelk, Claus ^a   Deufel, Reinhard ^a   Trasser, Andreas ^b   Schumacher, Hermann ^b   Alekseev, Egor ^c   Pavlidis, Dimitris ^c   Dickmann, Juergen ^a  

^a DAIMLER AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Coplanar; InGaAs; InP; Low power consumption; Millimeter wave; Pin diode; Switch

Indexed keywords

CAPACITORS; DIODES; ELECTRIC POTENTIAL; MILLIMETER WAVES; MOLECULAR BEAM EPITAXY; SWITCHES;

POWER CONSUMPTION; SMALL SIGNAL V-BAND MEASUREMENTS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0032650103     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1208     Document Type: Article

References (8)

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