X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb-SiO2 composite films

Applied Surface Science

Volumn 158, Issue 3, 2000, Pages 281-286

  Liu, Fa Min ^a   Zhang, Li De ^a   Zheng, M J ^a   Li, G H ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; TENSILE STRESS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

COMPOSITE FILM; GALLIUM INDIUM ANTIMONY SILICIDE; PHONON CONFINEMENT; TENSILE STRESS EFFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033723495     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00022-2     Document Type: Article

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