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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 430-434

Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

(6) Jung, S K a,b Hwang, S W a,b Ahn, D a Park, J H b Kim, Yong c Kim, E K c

a University of Seoul (South Korea)

b Korea University (South Korea)

c Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS;

INDIUM ARSENIDE; SELF-ASSEMBLED STRUCTURES;

TRANSISTORS;

EID: 0033723057 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/S1386-9477(99)00355-0 Document Type: Article

Times cited : (8)

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