Difference between traps determined from transient capacitance and transient reverse current

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2714-2715

  Matsuura, Hideharu ^a   Segawa, Kazushige ^a   Ebisui, Tatsuya ^a  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

Determination of trap densities and trap levels; Discharge current transient spectroscopy; Generation centers; Isothermal capacitance transient spectroscopy; Pin diode; Steady state reverse current; Surface states; Transient reverse current

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS;

DISCHARGE CURRENT TRANSIENT SPECTROSCOPY (DCTS); ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY (ICTS);

SEMICONDUCTOR DIODES;

EID: 0033723046     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2714     Document Type: Article

References (6)

1. H. Matsuura, M. Yoshimoto and H. Matsunami: Jpn. J. Appl. Phys. 34 (1995) L185.
2. H. Matsuura: Jpn. J. Appl. Phys. 36 (1997) 3569.
3. H. Matsuura and K. Segawa: Jpn. J. Appl. Phys. 39 (2000) 178.
4. H. Okushi: Philos. Mag. B 52 (1985) 33.
5. R. F. Pierret: Semiconductor Device Fundamentals (Addison-Wesley, Massachusetts, 1996) p. 272.
6. D. K. Schroder: Semiconductor Material and Device Characterization (John Wiley, New York, 1998) p. 269.