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Volumn 36, Issue 6 A, 1997, Pages 3569-3575

A simple graphical method for evaluating the polarization and relaxation times of dipoles or densities and energy levels of traps in a dielectric film from transient discharge current

Author keywords

Dielectric; Ferroelectric; Gate insulator of FET; Insulator; Polarization; Trap

Indexed keywords

GATE INSULATOR; TRANSIENT DISCHARGE CURRENT DENSITY; TRAP;

EID: 0031163083     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3569     Document Type: Article
Times cited : (6)

References (28)
  • 7
    • 15944373067 scopus 로고
    • Electrical Properties of Amorphous/Crystalline-Semiconductor Heterojunctions, ed. J. Kanicki Artech House, Boston, Materials and Device Physics, Chap. 11
    • H. Matsuura and U. Okushi: Electrical Properties of Amorphous/Crystalline-Semiconductor Heterojunctions, ed. J. Kanicki (Artech House, Boston, 1992) Amorphous and Microcrystalline Semiconductor Devices, Vol. II: Materials and Device Physics, Chap. 11.
    • (1992) Amorphous and Microcrystalline Semiconductor Devices , vol.2
    • Matsuura, H.1    Okushi, U.2
  • 26
    • 3643059101 scopus 로고    scopus 로고
    • note
    • 4 s.
  • 28
    • 3643106083 scopus 로고    scopus 로고
    • note
    • t) q/kT ln 10.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.