Model for dark current and multiplication in HgCdTe avalanche photodiodes

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 823-827

  Velicu, S ^a   Ashokan, R ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; IMPACT IONIZATION; LEAKAGE CURRENTS; LIGHT ABSORPTION; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS;

AVALANCHE PHOTODIODES; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033722730     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0231-0     Document Type: Article

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