Quasi-2D analysis of the effect of passivant on the performance of long-wavelength infrared HgCdTe photodiodes

Semiconductor Science and Technology

Volumn 11, Issue 9, 1996, Pages 1302-1309

  Dhar, V ^a   Bhan, R K ^a   Ashokan, R ^a   Kumar, V ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; COMPOSITION; ELECTRIC FIELDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MATHEMATICAL MODELS; MERCURY COMPOUNDS; SEMICONDUCTOR MATERIALS;

BAND TO BAND TUNNELLING; CURRENTS DIFFUSION TUNNELLING; GENERATION RECOMBINATION TUNNELLING; LONG WAVELENGTH INFRARED PHOTODIODES; PASSIVANT EFFECT; QUASI TWO DIMENSIONAL ANALYSIS; SURFACE STATE CHARGE DENSITY; TRAP ASSISTED TUNNELLING;

PHOTODIODES;

EID: 0030245240     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/9/010     Document Type: Article

References (15)

1. Reine M B, Sood A K and Tredwell T J 1981 Semiconductors and Semimetals vol 18 ed R K Willardson and A C Beer (New York: Academic) ch 6
2. Rogalski A and Piotrowski J 1989 Progr. Quantum Electron. 12 87
3. Reisinger A R, Weaver F J, Rader M A, Voelker J J, Caputi S J, Myers T H and Shanley J F 1992 J. Appl. Phys. 71 483
4. Bhan R K and Gopal V 1994 Semicond. Sci. Technol. 9 289
5. Nemirovsky Y and Bahir G 1989 J. Vac. Sci. Technol. A 7 450
6. Nemirovsky Y 1990 J. Vac. Sci. Technol. A 8 1185
7. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) p 368
8. Hansen G L, Schmit J L and Casselman T N 1982 J. Appl. Phys. 53 7099
9. Williams G M and DeWames R E 1995 J. Electron. Mater. 24 1239
10. Hansen G L and Schmit J L 1982 J. Appl. Phys. 54 1639
11. Weiler MH 1981 Semiconductors and Semimetals vol 16 ed R K Willardson and A C Beer (New York: Academic) p 119
12. Blanks D K 1991 J. Vac. Sci. Technol. B 9 1764
13. Bubulac L O 1991 Proc. SPIE 1484 67
14. Destefanis GL 1988 J. Crystal Growth 86
15. Dhar V, Ashokan R, Khan Z A D and Basu P K 1996 Semicond. Sci. Technol. 11 1077