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Volumn 41, Issue 2, 2000, Pages 202-206

Effect of cooling rate on excimer laser crystallization of silicon thin films

(1)  Tanabe, Hiroshi a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; LASER BEAM EFFECTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SUPERCOOLING; THIN FILM TRANSISTORS;

EID: 0033722214     PISSN: 0547051X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (3)

References (13)
  • 1
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  • 2
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    • High-performance low-temperature poly-si TFTs and circuits
    • H. Asada, et al., "High-Performance Low-Temperature Poly-Si TFTs and Circuits," NEC Res. & Develop., 40, 4, pp. 433-436, 1999.
    • (1999) NEC Res. & Develop. , vol.40 , Issue.4 , pp. 433-436
    • Asada, H.1
  • 3
    • 0032314579 scopus 로고    scopus 로고
    • Controlling the amount of Si-OH bonds for the formation of high-quality low-temperature gate oxides for poly-si TFTs
    • K. Yuda, et al., "Controlling the Amount of Si-OH Bonds for the Formation of High-Quality Low-Temperature Gate Oxides for Poly-Si TFTs," Materials Res. Soc. Symp. Proc., 508, pp. 167-172, 1998.
    • (1998) Materials Res. Soc. Symp. Proc. , vol.508 , pp. 167-172
    • Yuda, K.1
  • 5
    • 0024908311 scopus 로고
    • High-performance TFT's fabricated by XeCl Excimer laser annealing of hydrogenated amorphous-silicon film
    • K. Sera, et al., "High-Performance TFT's Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film," IEEE Trans. Electron Dev., 36, pp. 2868-2872, 1989.
    • (1989) IEEE Trans. Electron Dev. , vol.36 , pp. 2868-2872
    • Sera, K.1
  • 6
    • 0343022242 scopus 로고    scopus 로고
    • Capping layer effect on uniformity of Excimer laser crystallized poly-si thin film transistors
    • H. Tanabe, et al., "Capping Layer Effect on Uniformity of Excimer Laser Crystallized Poly-Si Thin Film Transistors," Abstr. Materials Res. Soc., 1996 Spring Meet., p. 124, 1996.
    • (1996) Abstr. Materials Res. Soc., 1996 Spring Meet. , pp. 124
    • Tanabe, H.1
  • 7
    • 0028194678 scopus 로고
    • Excimer laser crystallization of amorphous silicon films for poly-si TFT fabrication
    • H. Tanabe, et al., "Excimer Laser Crystallization of Amorphous Silicon Films for Poly-Si TFT Fabrication," Materials Res. Soc. Symp. Proc., 321, pp. 677-682, 1994.
    • (1994) Materials Res. Soc. Symp. Proc. , vol.321 , pp. 677-682
    • Tanabe, H.1
  • 8
    • 0029290936 scopus 로고
    • Effect of light pulse duration on Excimer-laser crystallization characteristics of silicon thin films
    • R. Ishihara, et al., "Effect of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films," Jpn. J. Appl. Phys., 34, pp. 1759-1764, 1995.
    • (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 1759-1764
    • Ishihara, R.1
  • 9
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    • Academic Press, Orlando
    • R. F. Wood, et al., Semiconductors and Semimetals, 23, Academic Press, Orlando, pp. 189-193, 1984.
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  • 12
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    • Pulsed laser-induced amorphization of silicon films
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  • 13
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    • Laser-induced order-disorder transitions in silicon by pulsed UV laser
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.