-
1
-
-
0033327758
-
Development of poly-si TFT in NEC
-
F. Okumura, "Development of Poly-Si TFT in NEC," NEC Res. & Develop., 40, 4, pp. 424-428, 1999.
-
(1999)
NEC Res. & Develop.
, vol.40
, Issue.4
, pp. 424-428
-
-
Okumura, F.1
-
2
-
-
0033309495
-
High-performance low-temperature poly-si TFTs and circuits
-
H. Asada, et al., "High-Performance Low-Temperature Poly-Si TFTs and Circuits," NEC Res. & Develop., 40, 4, pp. 433-436, 1999.
-
(1999)
NEC Res. & Develop.
, vol.40
, Issue.4
, pp. 433-436
-
-
Asada, H.1
-
3
-
-
0032314579
-
Controlling the amount of Si-OH bonds for the formation of high-quality low-temperature gate oxides for poly-si TFTs
-
K. Yuda, et al., "Controlling the Amount of Si-OH Bonds for the Formation of High-Quality Low-Temperature Gate Oxides for Poly-Si TFTs," Materials Res. Soc. Symp. Proc., 508, pp. 167-172, 1998.
-
(1998)
Materials Res. Soc. Symp. Proc.
, vol.508
, pp. 167-172
-
-
Yuda, K.1
-
5
-
-
0024908311
-
High-performance TFT's fabricated by XeCl Excimer laser annealing of hydrogenated amorphous-silicon film
-
K. Sera, et al., "High-Performance TFT's Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film," IEEE Trans. Electron Dev., 36, pp. 2868-2872, 1989.
-
(1989)
IEEE Trans. Electron Dev.
, vol.36
, pp. 2868-2872
-
-
Sera, K.1
-
6
-
-
0343022242
-
Capping layer effect on uniformity of Excimer laser crystallized poly-si thin film transistors
-
H. Tanabe, et al., "Capping Layer Effect on Uniformity of Excimer Laser Crystallized Poly-Si Thin Film Transistors," Abstr. Materials Res. Soc., 1996 Spring Meet., p. 124, 1996.
-
(1996)
Abstr. Materials Res. Soc., 1996 Spring Meet.
, pp. 124
-
-
Tanabe, H.1
-
7
-
-
0028194678
-
Excimer laser crystallization of amorphous silicon films for poly-si TFT fabrication
-
H. Tanabe, et al., "Excimer Laser Crystallization of Amorphous Silicon Films for Poly-Si TFT Fabrication," Materials Res. Soc. Symp. Proc., 321, pp. 677-682, 1994.
-
(1994)
Materials Res. Soc. Symp. Proc.
, vol.321
, pp. 677-682
-
-
Tanabe, H.1
-
8
-
-
0029290936
-
Effect of light pulse duration on Excimer-laser crystallization characteristics of silicon thin films
-
R. Ishihara, et al., "Effect of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films," Jpn. J. Appl. Phys., 34, pp. 1759-1764, 1995.
-
(1995)
Jpn. J. Appl. Phys.
, vol.34
, pp. 1759-1764
-
-
Ishihara, R.1
-
9
-
-
0042679368
-
-
Academic Press, Orlando
-
R. F. Wood, et al., Semiconductors and Semimetals, 23, Academic Press, Orlando, pp. 189-193, 1984.
-
(1984)
Semiconductors and Semimetals
, vol.23
, pp. 189-193
-
-
Wood, R.F.1
-
12
-
-
36449004765
-
Pulsed laser-induced amorphization of silicon films
-
T. Sameshima, et al., "Pulsed Laser-Induced Amorphization of Silicon Films," J. Appl. Phys., 70, pp. 1281-1289, 1991.
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 1281-1289
-
-
Sameshima, T.1
-
13
-
-
0343352615
-
Laser-induced order-disorder transitions in silicon by pulsed UV laser
-
Academic Press, New York
-
R. Tsu, et al., "Laser-Induced Order-Disorder Transitions in Silicon by Pulsed UV Laser," Laser & Electron Beam Processing of Materials, Academic Press, New York, pp. 149-155, 1980.
-
(1980)
Laser & Electron Beam Processing of Materials
, pp. 149-155
-
-
Tsu, R.1
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