Very low resistance CoSi2 formation by metal vapour vacuum arc implantation into SiO2/Si and Si3N4/Si structures

Surface and Coatings Technology

Volumn 128-129, Issue 1, 2000, Pages 192-198

  Lu, Dian Tong ^a  

^a BEIJING NORMAL UNIVERSITY   (China)

Author keywords

Ion implantation; Sheet resistance; SiO2 Si and Si3N4 Si structures; Suicide CoSi2

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; ION IMPLANTATION; SILICA; SILICON NITRIDE; SILICON WAFERS; VLSI CIRCUITS;

COBALT DISILICIDE; METAL VAPOR VACUUM ARC (MEVVA) IMPLANTER; TIME-OF-FLIGHT ENERGY ELASTIC RECOIL DETECTION (TOF-EERD) ANALYSIS;

PROTECTIVE COATINGS;

EID: 0033721635     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)00633-2     Document Type: Article

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